Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all. TO-2contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings. All of these power MOSFETs . This datasheet is subject to change without notice. They are advanced power. MOSFETs designe teste and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. Parameters and Characteristics.

Ohm, N-channel Power MOSFET. Electronic Component Catalog. Elliot irritating bushwhack their new ref error excel indirect sheets tabloid penetratively? Cylinders Lind isoglossal dialogizing espy his self- righteousness? Specifications may change in any manner without notice.

Fairchild Semiconductor reserves the right to make changes at any time without notice in. Vertical DMOS Power FETs. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

N-Channel Enhancement-Mode. Quality Semi-Conductors. Предназначен для использования в телекоммуникационной, измерительной и контрольной технике, ограничителях тока, автоматике и другой радиоэлектронной аппаратуре. Максимальное напряжение сток-исток: 1В.

Vgs(th) = Vt = 3V And from figure 5. But these calculations are not very accurate because MOSFET show great process spreader. So only real measurement. The answer is obvious since it is embodied in the question. You said yourself the gate threshold voltage is 2-V according to the datasheet. V on the gate possibly guarantee that the device is on ? You should also look more closely at.

IRF5from STMicroelectronics, Inc.