See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Complementary Power Transistors. Disclaimer This data sheet and its contents (the Information) belong to the Premier Farnell Group (the Group) or are licensed to it. Low collector-emitter saturation voltage.

The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and . COMPLEMENTARY SILICON POWER TRANSISTORS s. STMicroelectronics PREFERRED. NPN transistor mountend in TO-2plastic package. It is intented for power switching.

This value applies when the base-emitter resistance RBE = 1Ω. Derate linearly to 150°C case temperature at the rate of 0. This rating is based on the capability of the transistor to operate safely in a circuit of: . Designed for general−purpose switching and amplifier applications. Parameters and Characteristics. NPN SILICON POWER TRANSISTOR.

Specifications are subject to change without notice. W at 25°C Case Temperature. A Continuous Collector Current.

Suas características são praticamente as mesmas exceto pela potência máxima de dissipação que é um pouco menor. Na tabela abaixo a pinagem e as principais características deste componente. Mais informações podem ser obtidas baixando-se o datasheet. EasyEDA components online store LCSC. The actual product may differ from image shown.

Manufacturer: MULTICOMP MULTICOMP. Technical Datasheet : (EN). Use the lowest hfe you see to calculate the base current needed. It will be inefficient . Devices are also available in TO-2Case.

INTERNAL SCHEMATIC DIAGRAM. A complete understanding of all the quantities specified in the data sheet will not be achieved until circuit design is studied. Here, we will discuss the most important transistor ratings.