Simple drive requirements. This datasheet provides information about parts that are. For example, parts with lead (Pb) terminations are not RoHS- compliant. Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. TO-2contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings. Podstawowe parametry to 14A 100V 2Ω P-MOSFET TO220. Dostępna wieksza ilość. Do każdego układu dołączam dowód sprzedaży, na życzenie fakturę vat.

Only remainder of stock available. Availability date: Data sheet. KDV Hariç Fiyat: TL. Mosfet IRF Serisi, IRF 246A 53A – N KANAL KILIF . В этом файле: IRF24 IRF24 IRF24 IRF243. They are advanced power MOSFETs designe teste and guaranteed to withstand a specified level of energy in the . Manufacturer, Infineon (IRF).

Package, TO22 TO220AB. Transistor type, P-MOSFET, HEXFET. Polarisation, unipolar. Drain-source voltage, -100V. On-state resistance, 200mΩ. Gate-source voltage, 20V.

Junction-to-case thermal resistance, 1. Explore Discrete Semiconductors on Octopart: the fastest source for datasheets , pricing, specs and availability. Основные параметры: V(BR) DSS. Alışveriş Listeme Ekle Karşılaştırma listesine ekle.

Power mosfet çeşitleri. Volt, Dioda ini tidak sengaja tertekan dan pecah, jadi hanya terbaca sebagian, hanya terbaca BZX saja. BZX atau BZX setelah cari data sheet BZX xx. Неделю тому назад сгорел в мониторе этот Q8и предохранитель PF8- поставил.

Убился искать в Инете что это есть? Ни datasheet , ни pdf – ну ничего нет. NPN SILICON PLANAR TRANSISTORS. SYMBOL TEST CONDITION MIN.

DC Current Gain BC171A, 2A, 4A BC171B, 2B, 4B BC172C. See the schematics how load is connected in both the cases. It can be found from datasheets : the maximum junction temperature and the thermal resistance from junction-to- ambient for the package.