Absolute Maximum Ratings. These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient.
Pulsed Drain Current Б. Check stock and pricing, view product specifications, and order online.
Основные параметры и характеристики. Функциональное назначение: smd средней мощности. Большой выбор MOSFET, полевых транзисторов. Приятные цены, скидки на импортные транзисторы, радиодетали. Güvenlik Sistemleri konusunda hizmet vermekteyiz.
A SOT-International Rectifier datasheet pdf data sheet FREE from datasheetz. Datasheet (data sheet) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Find the PDF Datasheet, Specifications and Distributor Information.
Описание: HEXFET POWER MOSFET. Производитель: INTERNATIONAL RECTIFIER. A ƽ Ultra Low On- Resistance ƽ Low Gate Charge.
Максимальный ток: А Максимальная рассеиваемая мощность: 1. FET Feature, Logic Level Gate. Continue reading “Irlml5203”