Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for . TrenchMOSTM transistor. N-channel enhancement mode.

UNIT standard level field-effect power transistor in a plastic envelope using. This datasheet is subject to change without notice. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected . Struttura del transistor: MOSFET. Canale di conduzione: N. Potenza massima dissipabile ( Pd): 83. Tensione di blocco drain source (Vds): 55.

Massima tensione gate- source (Vgs): 10. Temperatura di giunzione (Tj), . Part of designing a solar voltage. Datasheet ( data sheet ) search for integrated circuits (ic), semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Statement of conformity . N-Channel MOSFET Transistor.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi- Conductors . IRFZ44N Datasheet PDF Download – Power MOSFET. Дополнительная информация.

Транзисторы биполярные с изолированным. As you can see already on the first page you can see some differences. The IRFZcan handle slightly more current and the max VDS is also slightly higher. Fairchild Semiconductor reserves the right to make changes at any time without notice in.

Specifications may change in any manner without notice. Does the switching cause it to heat up? Connecting it serially – in an on state – with a 3A current still made it heat up. Could it mean it was damaged previously and now has a much higher rDS(on)?

Технические описания и даташиты микросхем, реле, диодов, генераторов, транзисторов, конденсаторов и т. See this answer, which is basically the same problem, and use the same FET. Это мощный транзистор обладает хорошими техническими характеристиками.